Works performed by Han-jo Lim
(Published works in Korean conference proceedings or research journals of private institute are not included)
I. Publications in international journals
  1. Characterization of electron traps in n+ ITO on p-InP Solar Cells. [H. Lim, G. Sagnes, G. Bastide, L. Gouskov, and A. Oemry, J. Appl. Phys. 53(4), Apr. 1982, pp. 3085～3087]

  2. Deep Level Transient Spectroscopy Study in n-type InP. [H. Lim, G. Sagnes, G. Bastide, and M. Rouzeyre J. Appl. Phys. 53(4), Apr. 1982, pp. 3317～3320]

  3. A Study of the Chemical Oxide/InP Interface States. [H. Lim, G. Sagnes, and G. Bastide, J. Appl. Phys. 53(11), Nov. 1982, pp. 7450～7453]

  4. Intervalle de confiance de la signature obtenue par DLTS d'un piege profond. [G. Sagnes, G. Bastide, and H. Lim, Rev. Phys. Appl. (FRA) 17, Dec. 1982, pp. 787～792]

  5. Defects induced by electron irradiation in InP. [J.Suski, J.C. Bourgoin, and H.Lim, J. Appl. Phys. 54(5), May 1983, pp. 2852～2854]

  6. Humidity effects on the electrical characteristics of InP Tunnel MIS diodes. [H. Lim, G. Sagnes, Jap. J. Appl. Phys. 24(10), Oct. 1985, pp. L874～L876]

  7. Arsenic antisite formation by electron irradiation of n-type GaAs. [H.J.von Bardeleben, H. Lim, and J.C. Bourgoin J. Phys. C:Solid-State Phys. 20, Mar. 1987, pp. 1353～1357]

  8. Experimental Determination of the Energy stored by a Vacancy-Interstitial Pair in GaAs. [H. Lim, H.J. von Bardeleben, and J.C. Bourgoin, Phys. Rev. Lett. 58(22), Jun. 1987, pp. 2315～2317]

  9. Study of defects in GaAs by Differential Thermal Analysis. [H. Lim, H.J.von Bardeleben, and J.C. Bourgoin, J. Appl. Phys. 62(7), Oct. 1987, pp. 2738～2741]

  10. Solid Solubility of Selenium in AgGaSe2.[H.L. Park, S.Y. Gee, S.K. Chang, J.E. Kim, H.Y. Park, W.T. Kim, and H. Lim, Phys. Stat. Sol. (b) 162, Nov. 1990, pp. K9～K13]

  11. Interface Properties and Capacitance - Voltage Behaviour of InP MIS Prepared by Plasma Assisted Oxidation. [H. Lim, J.A. Baglio, N. DeCola, H.L. Park, J.I. Lee, and K.N. Kang, J. Appl. Phys. 69(11), Jun. 1991, pp. 7918～7920]

  12. Remote plasma assisted oxidation of InP. [J.I. Lee, K.N. Kang, J.A. Baglio, H. Lim, and H.L. Park, J. Mater. Sci. Lett. 10, 1991, pp. 1043～1045 ]

  13. Interstitial Zn Signature in Zn-diffused InP. [J.S. Choi, H. Lim, J.I. Lee, S.K. Chang, and H.L. Park Phys. Stat. Sol.(b) 164, 1991, pp. K69～K72]

  14. p-d Hybridization of the Valence Bands of AgxCu1-xGaSe2 Compounds. [S. Park, S.K. Lee, J.Y. Lee, J.E. Kim, H.Y. Park, H.L. Park, H. Lim, and W.T. Kim, J. Phys.: Condens. Matter 4(2), Jan. 1992, pp. 579～586]

  15. Growth of CdTe Epitaxial Films on p-InSb(111) grown by Temperature Gradient Vapor Transport Deposition. [T.W. Kim, B.J. Koo, M. Jung, S.B. Kim, H.L. Park, H. Lim, J.I. Lee, and K.N. Kang, J. Appl. Phys. 71(2), Jan. 1992, pp. 1049～1051]

  16. k-nonconserving optical transition in heavily doped LPE grown n-type In0.5Ga0.5P.[B.S. Jeong, J.S. Choi, S.K. Chang, C.H. Chung, H.L. Park, H.J. Lee, J.I. Lee, H. Lim, and S.Y. Kim, Solid State Commun. 82(1), Jan. 1992, pp. 7～12]

  17. Growth and Characterization of Al2O3 Insulator Gate on p-InP and p-Si by MOCVD at low Temperatures. [T.W. Kim, H. Lim, Y.D. Zheng, A.A. Reeder, and B.D. McCombe, J. Mater. Sci. 27, Oct. 1992, pp. 5531～5535]

  18. Interface States generated by Heat Treatment in Au/InGaP Schottky Diode. [H.J. Chae, C.H. Kim, S.D. Kwon, J.B. Lee, Byungdoo Choe, H. Lim, and Hyung Jae Lee, J. Appl. Phys. 72(8), Oct. 1992, pp. 3589～3592]

  19. Interface Constraints in InP MIS Structures. [C.H. Kim, Byungdoo Choe, H. Lim, J.I. Lee and K.N. Kang, Chin. J. Phys. 30(5), Oct. 1992, pp. 785～796]

  20. Study of Charge Trapping Instability in Silicon Nitride-Indium Phosphide MIS Structure by Constant-Capacitance Method. [C.H. Kim, Byungdoo Choe, H. Lim, I.K. Han, J.I. Lee, K.N. Kang, J. Appl. Phys. 72(10), Nov. 1992, pp. 4743～4748]

  21. Optical absorption of Co2+ ions in In2S3 thin films. [C.D. Kim, H. Lim, H.L. Park, H.Y. Park, J.E. Kim, H.G. Kim, Y.G. Kim, and W.T. Kim, Thin Solid Films 224, Jan. 1993, pp. 69～73]

  22. Deposition temperature dependence of electrical instability in InP MIS capacitor prepared by PECVD silicon nitride. [M.B. Lee, I.K. Han, Y.J. Lee, J.I. Lee, K.N. Kang, and H. Lim, J. Mater. Sci. Lett. 12, Jan. 1993, pp. 90～91]
  23. Constant Capacitance Technique to study Electrical Instabilities in InP MIS provided by PECVD Silicon Nitride. [C.H. Kim, S.D. Kwon, Byungdoo Choe, I.K. Han, J.I. Lee, K.N. Kang, H.L. Park, and H. Lim, Appl. Surf. Sci. 66, Feb. 1993, pp. 858～862]

  24. Optical absorption of Co2+ ions in HgGa2-xInxSe4 (0.0≤x≤2.0) solid solutions. [Y.L. Lee, C.D. Kim, H. Lim, H.Y. Park, J.E. Kim, and W.T. Kim, Solid State Commun. 85(10), Mar. 1993, pp. 883～886]

  25. Simple Model for the second substrate current hump in short-channel LDD MOSFETs. [M.B. Lee, J.I. Lee, K.N. Kang, K.S. Yoon, K.Y. Lim, and H. Lim, Phys. Stat. Sol.(a), 136(1), Mar. 1993, pp. K71～ K73]

  26. The Band Offset Measurement at the In0.5Ga0.5P/GaAs Heterojunction by using Properties of Transition Metal. [B.S. Jeong, H.K. Park, S.I. Kim, J.H. Lee, J.S. Whang, C.H. Chung, H.L. Park, H.J. Lee, and H. Lim, Solid State Commun. 86(6), May 1993, pp. 373～376]

  27. The Interfacial Layer Formation of the Al2O3/Si Structures grown by Low-Pressure MOCVD. [T.W. Kim, W.N. Kang, Y.S. Yoon, S.S. Yom, J.Y. Lee, Chayeon Kim, H. Lim, and H.L. Park, J. Appl. Phys. 74(1), Jul. 1993, pp. 760～762]

  28. Incorporation behavior of Co impurity in ZnSe crystal. [I. Hwang, Y.S. Choi, J.Y. Lee, J.E. Kim, H.Y. Park, H. Lim, and H.L. Park, J. Phys.:Condens. Matter 5(30), Jul. 1993, pp. 5295～5300]
  29. Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions. [M.G. Kim, S.D. Kwon, C.H. Kim, J.B. Lee, Byung-Doo Choe, and H. Lim, Appl. Phys. Lett. 63(10), Sept. 1993, pp. 1366～1368]

  30. Study on the low-field charge trapping phenomena in silicon nitride-indium phosphide structure. [C.H. Kim, S.D. Kwon, B.D. Choe, I.K. Han, J.I. Lee, K.N. Kang, J. Her, and H. Lim, J. Korean Phys. Soc. 26(5), Oct. 1993, pp. 518～523]

  31. Simple semi-analytic model for the substrate current of short channel MOSFETs with lightly doped drains. [M.B. Lee, J.I. Lee, K.N. Kang, K.S. Yoon, K.Y. Lim, H. Lim, J. Kor. Phys. Soc. 26, 1993, pp. S85～S88]

  32. Photoluminescence of MgGa2Se4 Single crystal. [H.G. Kim, B.N. Park, H. Lim, S.K. Min, H.L. Park, and W.T. Kim, Jpn. J. Appl. Phys. 32, 1993, Suppl. 32-3, pp. 476～478]

  33. Co Impurity Effects in Zn1-xCoxSe Crystals grown under Equilibrium Condition. [I.S. Hwang, Y.S. Choi, J.Y. Lee, J.E. Kim, H.Y. Park, H. Lim, and H.L. Park, Jpn. J. Appl. Phys. 32, 1993, Suppl. 32-3, pp. 558～560]

  34. Optical properties of CuAlSe2 single crystal. [M.S. Jin, S.K. Min, H. Lim, H.L. Park, and W.T. Kim, Jpn. J. Appl. Phys. 32, 1993, Suppl. 32-3, PP. 593～595]
  35. Deep levels in undoped and Er-doped TlGaS2 single crystals. [H.J. Song, S.H. Yun, W.T. Kim, S.K. Min, H. Lim, and H.L. Park, Jpn. J. Appl. Phys. 32, 1993, Suppl. 32-3, PP. 610～611]

  36. Effects of UV-illumination on the charge trapping behavior in SiNx/InP MISstructure provided byplasma enhanced chemical vapor deposition. [C.H. Kim, I.K. Han, J.I. Lee, K.N. Kang, S.D. Kwon,B.D. Choe, H.L. Park, J.Her, and H. Lim, J. Mater. Sci. Lett. 13(8), Apr. 1994, pp. 563～565]
  37. Two-temperature technique for PECVD growth of silicon-nitride on InP. [J. Her, H. Lim, C.H. Kim, I.K. Han, J.I. Lee, K.N. Kang, J.E. Kim, and H.Y. Park, J. Mater. Sci. Lett. 13(12), June 1994, pp. 898～ 900]

  38. Photoluminescence of staggered In0.5Ga0.5P/AlxGa1-xAs heterojunction. [K.S. Kim, J.B. Lee, B.D. Choe, W.G. Jung, and H. Lim, Appl. Phys. Lett. 65(4), Jul. 1994, pp. 451～453]
  39. Solid Solubilities of Magnetic Ions in Diluted Magnetic Semiconductors grown under Equilibrium Conditions. [Insun Hwang, Hidong Kim, Jae-Eun Kim, Hae Yong Park, and H. Lim, Phys. Rev.B 50(12), Sept. 1994, pp. 8849～8852]

  40. Investigation of Deep Levels in In1-xGaxP grown by Liquid Phase Epitaxy. [Tak Hee Lee, S.D. Kwon, Ho Ki Kwon, Byung-Doo Choe, and H. Lim, J. Korean Phys. Soc. 27(5), Oct. 1994, pp. 550～ 554]

  41. Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid-phase epitaxy. [Ho Ki Kwon, S.D. Kwon, In Kim, J.B. Lee, B.D. Choe, and H. Lim, J. Appl. Phys. 77(2), Jan. 1995, pp. 512～516]

  42. Band Alignment of In0.5Ga0.5P/AlxGa1-xAs Heterojunction and Feasibility of Device Applications. [K.S. Kim, I.J. Kim, B.D. Choe, H. Lim, and W.G. Jeong, J. Kor. Phys. Soc. 28, Feb. 1995, pp. S192～ S194]

  43. Variation of Al Composition in AlGaAs during MOCVD using CCl4. [J.S. Lee, I. Kim, B.D. Choe, W.G. Jeong, and H. Lim, J. Kor. Phys. Soc. 28, Feb 1995, pp. S195～S199]

  44. Interface properties of (NH4)2Sx-treated In0.5Ga0.5P Schottky contacts. [S.D. Kwon, C.H. Kim, Ho Ki Kwon, Byungdoo Choe, and H. Lim, J. Appl. Phys. 77(5), Mar. 1995, pp. 2202～2204]

  45. Determinatioin of the conduction-band discontinuities of In0.5Ga0.5P/In1-xGaxAS1-yPy by capacitance-voltage analysis. [Y.H. Cho, K.S. Kim, S.W. Ryu, S.K. Kim, B.D. Choe, and H. Lim, Appl. Phys. Lett. 66(14), Apr. 1995, pp. 1785～1787]

  46. Room-Temperature Photoreflectance and Photoluminescence of Heavily Si-Doped GaAs. [C. Lee, N.Y. Lee, K.J. Lee, J.E. Kim, H.Y. Park, D.W. Kwak, H.C. Lee, and H. Lim, J. Appl. Phys. 77(12), June 1995, pp. 6727～6729]

  47. Investigation of electrical properties and stability of Schottky contacts on (NH4)2Sx-treated In0.5Ga0.5P. [S.D. Kwon, Ho Ki Kwon, Byung-Doo Choe, H. Lim, and J.Y. Lee, J. Appl. Phys. 78(4), Aug. 1995, pp. 2482～2488]

  48. Critical Energies of photoreflectance and line shape analysis of photoluminescence of Heavily Si-doped GaAs. [C. Lee, N.Y. Lee, K.J. Lee, J.E. Kim, H.Y. Park, D.H. Kwak, H.C. Lee, and H. Lim, Inst. Phys. Conf. Ser. No. 145, Cheju, Korea, Aug. 1995, pp. 337～342]
  49. Photoluminescence Spectra of Heavily Si-doped GaAs at low temperature. [N.Y. Lee, J.E. Kim, H.Y. Park, D.H. Kwak, H.C. Lee, and H. Lim, Inst. Phys. Conf. Ser. No. 145, Cheju, Korea, Aug. 1995, pp. 481～486]

  50. Characteristics of group VI element DX centers in InGaP. [S.D. Kwon, H.K. Kwon, B.D. Choe, and H. Lim, Inst. Phys. Conf. Ser. No. 145, Cheju, Korea, Aug. 1995, pp. 487～490]

  51. Determination of Conduction Band Tail and Fermi Energy of Heavily Si-Doped GaAs by Room-Temperature Photoluminescence. [N.Y. Lee, K.J. Lee, C. Lee, J.E. Kim, H.Y. Park, D.W. Kwak, H.C. Lee, and H. Lim, J. Appl. Phys. 78(5), Sept. 1995, pp. 3367～3370]
  52. Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1-xAs heterojunction by photoluminescence measurement. [K.S. Kim, Y.H. Cho, B.D. Choe, W.G. Jeong, and H. Lim, Appl. Phys. Lett. 67(17), Oct. 1995, pp. 1718～1720]
  53. Chemical trends of S-, Se-, and Te- related DX centers in InGaP. [S.D. Kwon, Ho Ki Kwon, B.D. Choe, and H. Lim, Appl. Phys. Lett. 67(17), Oct. 1995, pp. 2533～2535]

  54. Effect of Donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy. [Ho Ki Kwon, S.D. Kwon, B.D. Choe, and H. Lim, J. Appl. Phys. 78(12), Dec. 1995, pp. 7395～7397]

  55. Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P heterojunction determined by capacitance- oltage analysis. [I.J. Kim, Y.H. Cho, K.S. Kim, B.D. Choe, and H. Lim, Appl. Phys. Lett. 68(24), July 1996, pp. 3488～3490]
  56. Concentration Dependent Electron Distributions in Heavily Si-doped GaAs. [N.Y. Lee, J.E. Kim, H.Y. Park, D.H. Kwak, H.C. Lee, and H. Lim, Solid State Commun. 99(8), Aug. 1996, pp. 571～575]

  57. Thermal stability of sulfur-treated InP investigated by photoluminescence. [I.K. Han, D.H. Woo, H.J. Kim, E.K. Kim, J.I. Lee, S.H. Kim, K.N. Kang, H. Lim, and H.L. Park, J. Appl. Phys. 80(7), Oct. 1996, pp. 4052～4057]

  58. Group Ⅵ element-related DX centers in In0.18Ga0.82As0.28P0.72. [H.K. Kwon, B.D. Choe, S.D. Kwon, and H. Lim, J. Appl. Phys. 80(7), Oct. 1996, pp. 4211～4213]

  59. Influence of carrier flow on the temperature-dependent capacitance-voltage profile of heterojunction structures. [S.D. Kwon, H. Lim, H.K. Shin, and B.D. Choe, Appl. Phys. Lett. 69(18), Oct. 1996, pp. 2740～2742]

  60. Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on GaAs substrate. [Y.H. Cho, B.D. Choe, and H. Lim, Appl. Phys. Lett. 69(24), Dec. 1996, pp. 3740～3742]

  61. Self-consistent simulation of capacitance-voltage profiles in quantum well structures. [C.R. Moon, D.W. Kang, B.D. Choe, I. Kang, S.D. Kwon, H.K. Shin, and H. Lim, J. Korean Phys. Soc. 30(1), Feb. 1997, pp. 93～98]

  62. Properties of Tungsten-Silicide Films on Polysilicon with Phosphorous Doping. [H.H. Chung, J.H. Lee, K.S. Chung, and H. Lim, J. Korean Phys. Soc. 30(1), Feb. 1997, pp. 136～139]

  63. Discrimination of the Substrate-Induced Artifact from the Photoluminescence Peak of Heavily doped GaAs. [N.Y. Lee, J.E. Kim, H.Y. Park, D.H. Kwak, H.C. Lee, and H. Lim, J. Korean Phys. Soc. 30(2), Apr. 1997, pp. 221～224]

  64. Optical Properties of Ga2-xSbxSe3 solid solution crystals. [H.G. Kim, C.H. Cho, W.S. Lee, D.T. Kim, H.J. Lim, H.L. Park, and W.T. Kim, J. Cryst. Res. Tech. 31, 1996, pp. 257～260]

  65. Deep Levels in CdGa2Se4. [C.D. Kim, H.J. Lim, H.J. Song, S.K. Oh, W.T. Kim, J. Cryst. Res. Tech. 31, 1996, pp. 899～902]
  66. Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P. [C.R. Moon, B.D. Choe, S.D. Kwon, and H. Lim, J. Appl. Phys. 81(15), Mar. 1997, pp. 2904～2906]

  67. Increase of In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers. [N.Y. Lee, J.E. Kim, H.Y. Park, S.D. Kwon, H.K. Shin, and H. Lim, Solid State Commun. 102(10), Apr. 1997, pp. 763～767]

  68. Stability of sulfur-treated InP surface studied by photoluminescence and X-ray phtoelectron spectroscopy. [I.K. Han, E.K. Kim, J.I. Lee, S.H. Kim, K.N. Kang, Y. Kim, H. Lim, and H.L. Park, J. Appl. Phys. 81(10), May. 1997, pp. 6986～6991]

  69. Electron distribution and capacitance-voltage profile of multiple quantum wells from self-consistent simulations. [C.R. Moon, B.D. Choe, S.D. Kwon, and H. Lim, Appl. Phys. Lett. 70(22), Jun. 1997, pp 2987～2989]

  70. Electrical characterization of partially relaxed In0.2Ga0.8As/GaAs multiple quantum well structures. [C.R. Moon, In Kim, J.S. Lee, B.D. Choe, S.D. Kwon, and H. Lim, Appl. Phys. Lett. 70(24), Jun. 1997, pp. 3284～3286]

  71. Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy. [Y.H. Cho, B.D. Choe, Y. Kim, and H. Lim, J. Appl. Phys. 81(11), Jun. 1997, pp. 7362～7366]

  72. DX Centers and other Deep Levels in In0.18Ga0.82As0.28P0.72. [H.K. Kwon, B.D. Choe, S.D. Kwon, and H. Lim, J. Kor. Phys. Soc. 30, Jun. 1997, pp. S143～S146]

  73. Dynamics of anti-Stokes photoluminescence in type-II AlGaAs-GaInP2 heterostructure: The important role of long-lived carriers near interface. [Y.H. Cho, D.S. Kim, B.D. Choe, H. Lim, J.I. Lee, and D. Kim, Phys. Rev.B. 56(8), Aug. 1997, pp. R4375～R4378]
  74. Schottky barrier heights and conduction band offsets of In1-xGaxAs1-yPy lattice-matched to GaAs. [J.K. Lee, Y.H. Cho, B.D. Choe, K.S. Kim, H.I. Jeon, H. Lim, and M. Razeghi, Appl. Phys. Lett. 71(7), Aug. 1997, pp. 912～914]

  75. Properties of electron traps in In1-xGaxAsyP1-y grown on GaAs0.61P0.39. [H.K. Kwon, B.D. Choe, and H. Lim, J. Appl. Phys. 82(6), Sept. 1997, pp. 2969～2973]

  76. Photoluminescence due to the hole capturing of DX- centers in In0.32Ga0.68P. [N.Y. Lee, I. Hwang, J.E. Kim, H.Y. Park, H.K. Kwon, B.D. Choe, and H. Lim, Solid State Commun. 105(1), Jan. 1998, pp. 1～5)]

  77. Spatial resolution of capacitance-voltage profile in quantum well structures. [C.R. Moon,B.D.Choe, S.D. Kwon, and H. Lim, Appl. Phys. Lett. 72(10), Mar. 1998, pp. 1196～1198]

  78. Carrier Dynamics of Anti-Stokes Photoluminescence in Staggered Band-Lineup AlxGa1-xAs/GaInP2 Heterostructures. [Y.H. Cho, J.J. Song, D.S. Kim, H. Lim, and B.D. Choe, SPIE Proc. Vol. 3277, Mar. 1998, pp. 134～141]

  79. Photoluminescence of Ga2-xErxS3 single crystals. [M.S. Jin, Y.G. Kim, B.S. Park, D.I. Yang, H. Lim, H.L. Park, and W.T. Kim, Inst. Phys. Conf. Ser. No. 152 : Section C, Apr. 1998, pp. 421～424]
  80. Optical Properties of Cd4GeS6 and Cd4GeS6:Co2+ single crystals. [D.T. Kim, H.G. Kim, H.Y. Park, J.E. Kim, H.J. Lim, H.L. Park, and W.T. Kim, Inst. Phys. Conf. Ser. No. 152 : Sec. D, Apr. 1998, pp. 621～624]

  81. Optical Properties of undoped and Co2+-doped MgGa2S4 single crystals. [H.G. Kim, W.S. Lee, D.T. Kim, H.Y. Park, J.E. Kim, H. Lim, H.L. Park, H.J. Song, and W.T. Kim, Inst. Phys. Conf. Ser. No. 152 : Sec. D, Apr. 1998, pp. 625～628]

  82. Capacitance-Voltage Characteristics of Quantum Well Structures. [C.R. Moon, H. Lim, and B.D. Choe, J. Kor. Phys. Soc. 34, Apr. 1999, pp. S77～S80]

  83. Effect of wet oxidized AlxGa1-xAs layer on the interdiffusion of InGaAs/GaAs quantum wells. [J.S.Choe, S.W. Ryu, B.D. Choe, and H. Lim, J. Appl. Phys. 83(11), Jun. 1998, pp. 5779～5782]
  84. Influence of partial dopant ionization on the capacitance-voltage profiles of δ -doped structure. [C.R. Moon, S.D. Kwon, H. Lim, and B.D. Choe, Appl. Phys. Lett. 72(26), Jun. 1998, pp. 3491～3493]

  85. Donor-Related Deep Levels in In1-xGaxAsyP1-y. [H.K. Kwon, S.D. Kwon, H. Lim, and B.D. Choe, Defects and Diffusion Forums Vol. 157-159, Jul. 1998, pp. 83～102]

  86. Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-Ⅱ heterostructures. [Y.H. Cho, J.J. Song, H. Lim, B.D. Choe, J.I. Lee, and D. Kim, Appl. Phys. Lett. 73(9), Aug. 1998, pp. 1245～1247]

  87. Electron distribution and capacitance-voltage characteristics of n-doped quantum wells. [C.R. Moon, B.D. Choe, S.D. Kwon, H.K. Shin, and H. Lim, J. Appl. Phys. 84(5), Sept. 1998, pp. 2673～2683]

  88. Influence of polysilicon deposition conditions on the characteristics of oxide-nitride-oxide memory capacitors. [H. Lim, S.S. Kim, and K.S. Chung, J. Korean Phys. Soc. 33(4), Oct. 1998, pp. 501～506]

  89. Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts. [H.K. Kwon, Y. Kim, and H. Lim, Appl. Phys. Lett. 73(23), Dec. 1998, pp. 3423～3425]
  90. Defect-related luminescence in Mg-doped n-type GaN grown by hydride vapor phase epitaxy. [C. Lee, J.E. Kim, H.Y. Park, S.T. Kim, and H. Lim, J. Phys.; Condens. Matter 10, Dec. 1998, pp. 11103～11110]

  91. Essential parameter in the formation of photonic bandgaps. [C.-S. Kee, J.E. Kim, H.Y. Park, S.J. Kim, H.C. Song, Y.S. Kwon, N.H. Myung, S.Y. Shin, and H. Lim, Phys. Rev.E 59(4), Apr. 1999, pp. 4695～4698]

  92. Influence of quantum-well structural parameters on capacitance-voltage characteristics. [C.R. Moon, and H. Lim, Appl. Phys. Lett. 74(20), May 1999, pp. 2987～2989]

  93. Photoluminescence study of the 1018 meV line from ion-implanted silicon. [H. Lee, S.-H. Choi, H. Lim, and E. Seong, J. Kor. Phys. Soc. 34, June, 1999, pp. S295～S298]

  94. Investigation of Crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films. [H. Seo, T-H. Jeong, J.W. Park, C. Yeon, D.C. Lee, S.-J. Kim, H.J. Lim, and S.Y. Kim, SPIE Proc. 3864, Hawaii USA, July 1999, pp. 116～118]
  95. Influence of binders on the sensing and electrical characteristics of WO3-based gas sensors. [J.I. Yang, H. Lim, and S.D. Han, Sensors and Actuators B 60, Sept. 1999, pp. 71～77]

  96. Roles of wave impedance and refractive index in photonic crystals with magnetic and dielectric properties. [C.-S. Kee, J.-E. Kim, H.Y. Park, and H. Lim, IEEE Trans. Microw. Th. & Tech. 47(11), Nov. 1999, pp. 2148～2150]
  97. Influence of series resistance on the capacitance-voltage profile of quantum well structures. [C.R. Moon, I. Park, H. Lim, J.-E. Kim, and H.Y. Park, J. Kor. Phys. Soc. 35(6), Dec. 1999, pp. 520～523]
  98. Defect luminescence in Si-doped n- and p-type GaAs. [Y. Ha, C. Lee, J.E. Kim, H.Y. Park, S.B. Kim, H. Lim, B.C. Kim, and H.C. Lee, J. Kor. Phys. Soc. 36(1), Jan. 2000, pp. 42～48]

  99. Essential role of impedance in the formation of acoustic band gaps. [C.-S. Kee, J.-E. Kim, H.Y. Park, K.J. Chang, and H. Lim, J. Appl. Phys. 87(4), Feb. 2000, pp. 1593～1596]

  100. Duplexer using Microwave Photonic Bandgap Structure. [S.S. Oh, C.S. Kee, J.E. Kim, H.Y. Park, T.I. Kim, I. Park, H. Lim, Appl. Phys. Lett. 76(16), Apr. 2000, pp.2301～2303]

  101. Two-dimensional Tunable Magnetic Photonic Crystals. [C.S. Kee, J.E. Kim, H.Y. Park, I. Park, H. Lim, Phys. Rev. B 61(23), June 2000, pp. 15523～15525]

  102. Effects of In0.53Ga0.47As cap layer and stoichiometry of dielectric capping layers on impurity free vacancy disordering of In0.53Ga0.47As/InP Multi-Quantum well structures. [J. S. Yu, Y. T. Lee, and H. Lim, J. Appl. Phys. 88(10), Nov. 2000, pp. 5720～5723]
  103. Magnetic Materials in Photonic Crystal. [C.-S. Kee, J.-E. Kim, H.Y. Park, and H. Lim, Jpn, J. Appl. Phys. Suppl. 39-1, Dec. 2000, pp. 444～446]

  104. Variable Temperature Scanning Capacitance Microscopy: a way to probe charge traps in oxide or semiconductor. [C. K. Kim, I. T. Yoon, Y. Kuk, and H. Lim, Appl. Phys. Lett. 78(5), Jan. 2001, pp. 613～615]

  105. Microwave photonic crystal multiplexer and its applications. [C. S. Kee, I. Park, H. Lim, J. E. Kim, and H. Y. Park, Current Appl. Phys. 1, Jan. 2001, pp.84～87]

  106. Coexisting Phenomena of the CuPt-type and the Cu3Au-type Ordered Structures nearZnTe/ZnSe Heterointerfaces in ZnxCd1-xTe/ZnSySe1-y Quantum Wells. [T.W. Kim, D.U. Lee, D.C. Choo, Y.S.Lim, H.S. Lee, J.Y. Lee, and H. Lim, Solid State Commun. 117, Feb. 2001, pp. 501～504]
  107. Spectro-Ellipsometry Investigation of Cascaded Crystalization Behavior of Phase-Change Ga-Sb-Te Alloy. [S. Y. Kim, S. J. Kim, H. Lim, S. M. Lah, Y. D. Park, T. H. Jeong, and H. Seo, Jpn. J. Appl. Phys. 40 Part 1(NO. 3B), Mar. 2001, pp. 1575～1577]
  108. The dependence of the carrier density and the mobility on the spacer layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells.[M. Jung, T. W. Kim, D. V. Lee, D. C. Choo, K. H. Yoo, D. L. Kim, M. D. Kim, and H. Lim, Appl. Surf. Sci. 177, Mar. 2001, pp. 1～7]
  109. Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with Dielectric and InGaAs capping layers. [M. K. Lee, J. D. Song, J. S. Yu, Y. T. Lee, T. W. Kim, and H. Lim, Appl. Phys. A 73, Mar. 2001, pp. 357～360]
  110. Numerical analysis on the LDMOS with a double epi-layer and trench electrodes. [I.-Y Park, Y.-I Choi, S.-k. Chung, H. Lim, S.-I. Mo, J.-S. Choi and M.-K. Han, Microelectron. Journ. 32, Apr. 2001, pp. 497～502]
  111. Electrical and Optical Properties of α-In2Se3 Single Crystals with an In Excess. [N.-O. Kim, H.-G. Kim, H. Lim, C.-I. Lee, M.S. Jin, C.-S. Yoon, W.-T. Kim, J. Kor. Phys. Soc. 38(4), Apr. 2001, pp. 405～ 408]
  112. 1.55-μm Wavelength Strain-Compensated InxGa1-xAs/InyAl1-yAs Electroabsorption Modulators. [T. W. Kim, M. H. Jeon, D. V. Lee, D. C. Choo, J. H. Kim, M. D. Kim, H. D. Jung, K. H. Yoo, J. Y. Kim, and H. Lim, Jpn. J. Appl. Phys. 40 Part 1(5A), May 2001, pp. 3120～3123]
  113. Tunable omnidirectional reflection bands and defect modes of a one-dimensional photonic band gap structure with liquid crystals. [Y.-K. Ha, Y.-C. Yang, J.-E. Kim, H.-Y. Park, C.-S. Kee, H. Lim, and J.-C. Lee, Appl. Phys. Lett. 79(1), July 2001, pp. 15～17]
  114. Two-dimensional tunable metallic photonic crystals infiltrated with liquid crystals. [C.-S. Kee, H. Lim, Y.-K. Ha, J.-E. Kim, and H. Y. Park, Phys. Rev. B 64, Aug. 2001, pp. 085114-1～7]

  115. Tunable complete photonic band gaps of two-dimensional photonic crystals with intrinsic semiconductor rods. [C.-S. Kee and H. Lim, Phys. Rev. B. 64 Rapid Commun, Sept. 2001, pp. 121103-1～4]

  116. Magnetoresistance of amorphous indium oxide films on the insulating side near the superconductor-insulator transition.[Y.J. Lee, Y.S Kim, E.N Bang, H. Lim, and H.K. Shin, J. Phys.: Condens. Matter 13, Oct. 2001, pp. 8135-8144
  117. Effect of liquid crystal infilteration on metallic photonic crystals. [C. S. Kee, S.-Z. Li, and H. Lim, SPIE Proc. 4859, Singapore, Nov. 2001, pp. 73-79]

  118. Effects of ageing and arthritic disease on nitric oxcide production by human articular chondrocytes. [B.-H. Min, H. J. Kim, H. Lim, C.-S. Park, and S. R. Park, Exp. & Mol. Medicine 33(4), Dec. 2001, pp. 299-302]

  119. Improvement of Selective Copper Deposition by N2 Plasma Treatments. [S.K. Kwak, K.S. Chung, I. Park, and H. Lim, J. Korean Phys. Soc. 39(6), Dec. 2001, pp. 1076-1080]

  120. Invariant Imbedding Equations for Electromagnetic Waves in Stratified Magnetic Media : Applications to One-Dimensional Photonic Crystals. [K. Kim, H. Lim, and D.-H. Lee, J. Korean Phys. Soc. 39(6), Dec. 2001, pp. L956-L960]
  121. Characterization of subpopulated articular chondrocytes seperated by percoll density gradient. [B.-H. Min, H. J. Kim, H. Lim, S. R. Park, In Vitro Cell Dev. Biol. J. 38(1), Jan. 2002, pp. 35-40]

  122. Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers. [J.S. Yu, J.D. Song, Y.T. Lee, and H. Lim, J. Appl. Phys. 91(4), Feb. 2002, pp. 2080-2084]
  123. Photonic bandgap formation by microstrip ring: a way to reduce the size of microwave photonic bandgap structures. [C.-S. Kee, M.-Y Jang, I. Park, H. Lim, J.-E. Kim, H.Y. Park. and J.I. Lee, Appl. Phys. Lett. 80(10), Mar. 2002, pp. 1520-1522]
  124. Dependence of bandgap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structure by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers. [J.S. Yu, J.D. Song, Y.T. Lee, and H. Lim, J. Appl. Phys. 91(7), Apr. 2002, pp. 4256-4260]
  125. Substrate and pretreatment dependence of Cu nucleation by metal-organic chemical vapor deposition. [S.K. Kwak, K.S. Chung, I. Park, and H. Lim, Current Appl. Phys. 2(3), June 2002, pp. 205-211]

  126. Influence of dielectric-capping-layer deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free disordering. [J. S. Yu, J. D. Song, Y. T. LEE, and H. Lim, J. Appl. Phys. 92(3), Aug. 2002, pp. 1386-1390]
  127. Tunable three-dimensional photonic crystals using semiconductors with varying free-carrier densities. [Y.-K. Ha, J.-E. Kim, H. Y. Park, C.-S. Kee, and H.Lim, Phys. Rev. B 66(7), Aug. 2002, pp. 075109-1～075109-5]

  128. Coupling characteristics of localized photons in two-dimensional photonic crystals. [C.-S. Kee, H. Lim, and J. I. Lee, Phys. Rev. B 67(7), Feb. 2003, PP. 073103-1～073103-4]

  129. Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures. [J.S. Yu, J.D. Song, Y.T. Lee, and H. Lim, Semiconductor Sci. & Technol. 18(2), Feb. 2003, pp. 170～173]
  130. Tunable resonant transmission of electromagnetic waves through a magnetized plasma. [C.-S. Kee, S.-Z. Li, K. Kim, H. Lim, Phys. Rev. E, 67(3), Mar. 2003, pp. 036612-1～0.6612-6]

  131. Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal anealing. [J.S. Yu, J.D. Song, J.M. Kim, S.J. Bae, Y.T. Lee and H. Lim, Appl.Phys.A 76(6), Mar. 2003, pp.979∼982]
  132. Fabrication of multi-wavelength In0.2Ga0.8 AS/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layer with different stoichiometries. [J.S. yu, J.D. Song, Y.T. Lee, and H. Lim, Appl. Phys. A:Materials Science & Processing, DOI:10.1007/Soo339-003-2323-1, Jul.2003, pp.1~4]
  133. Tuning of anisotropic optical properties of two-dimensional dielectric photonic crystals. [C.-S. Kee, K. Kim, and H. Lim, Physica B 338(1),Oct. 2003, pp.153∼158]

  134. Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers. [J.S. Yu, J.D. Song, J.M. Kim, Y.T. Lee, and H. Lim, Appl. Phys. A 78(1), Jan. 2004, pp.113∼117]
  135. Optical resonant transmission in metal-dielectric multilayers [C.-S. Kee, K. Kim and H. Lim, J.Opt.A 6(1), Jan. 2004, pp.22∼25]

  136. Compact microstrip bandpass filter using shunt open stubs and coupled slots on ground plane. [K. Kim, S. Kim, H. Han, I. Park, and H. Lim, Electron. Lett. 40(5), Mar. 2004, pp.313∼314]
  137. Highly efficient photonic crystal-based multi-channel drop filters of three-port system with reflection feedback. [S. Kim, I. Park, H. Lim, and C.-S. Kee, Optics Express 12(22), Nov. 2004, pp.5518~5525]

  138. A compact low-pass filter with ultra-wide stopband. [K. Kim, J.-H. Jung, C.-S. Kee, I. Park, and H. Lim, Microw. & Opt. Tech. Lett. 43(4), Nov.2004, pp.303~306]

  139. Characteristics of resonant modes of photonic crystal cavities [H.-Y. Park, D.-H. Cho, C,-S, Kee, H. Lim, Proc. of SPIE Vol. 5360, Dec. 2004, pp.400 ∼ 404]

  140. Theory of the propagation of coupled waves in arbitrarily inhomogeneous stratified media. [K. Kim, D.-H. Lee, and H. Lim, Europhys. Lett. 69(2), Jan. 2005, pp.207~213]

  141. Synthesis and Crystal Structure of a New Pentanary Thiophosphate, K0.5Ag0.5Nb2PS10 [Y. Dong, Sangrok Kim, Hoseop Yun, and H. Lim, Bull. Kor. Chem. Soc. 26(2), Feb. 2005, pp. 309 ∼ 311]

  142. Proposal for ideal 3dB optical splitter/combiners in photonic crystals. [S. Kim, I. Park, and H. Lim, Optics Letters 30(3), Feb. 2005. pp.257~259]
  143. Comment on "Coupling and Decoupling of Electromagnetic waves in Parallel 2-D Photonic Crystal Waveguides". [C.-S. Kee, D.-H. Cho, and H. Lim, IEEE J. Quant. Electron. In Press, 2005]

  144. Spectro-ellipsometric Studies of Au/SiO₂Nanocomposite Films,〔S. Cho, H. Lim, K. S. Lee, T.S. Lee, B. Cheong, W. M. Kim, and S. Lee, Thin Solid Films 475, Mar. 2005, pp. 133～138]

  145. Tuning and widening of stop bands of microstrip photonic band gap ring structures. [S.C. Kee, M. -Y. Jang, S. I. Kim, I. Park, and H. Lim, Appl. Phys. Lett, 86(1), May 2005, pp. ~ ]

  146. Higher-order optical resonant filters bsed on coupled defect resonators in photonic crystals. [D. Park, S. Kim, I. Park, and H. Lim, J. Lightwave Technol. May 2005, pp. ~ ]

  147. Optimal transparent one-dimensional metallo-dielectric photonic crystal structures [C.-S. Kee, K. Kim, and H. Lim, J. Kor. Phys. Soc. 47(2), Aug. 2005, pp. 385 ∼ 388]

  148. Characteristics of microwave filters based on microstrip photonic bandgp ring structures. [S.-I. Kim, M.-Y. Jang, C.-S. Kee, I. Park and H. Lim, Current Appl. Phys. (Elsevier), In Press]

  149. Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As MQW electroabsorption modulator structure. [J.S. Yu, Y. T. Lee, and H. Lim, Semicond. Sci. Technol. 20, Oct. 2005, pp. 851 ∼ 855]
  150. Disordering of InGaAs/GaAs MQW structure by impurity-free vacancy diffusion for advancced optoelectronic devices and their integration. [J. S. Yu, J. M. Kim, Y. T. Lee, J. D. Song, and H. Lim, Proc. of SPIE Vol. 5729, Oct. 2005, pp. 61 ∼ 71]
  151. Photonic crystal multi-channel drop filters based on microstrip lines. 〔C. S. Kee, I. Park, and H. Lim, J. Phys. D 39(6), June 2006, pp. 2932 ～ 2934]

  152. Optical parametric chirped pulse amplification of Cr:forsterite laser pulses in periodically poled stoichiometric LiTaO₃at 1 kHz. [F. Rotermund, C. J. Yoon, K. Kim, H. Lim, S. Kurimura, and K. Kitamura, Appl. Phys. B 85(1), Jul. 2006, pp. 17 ～ 20]
  153. Exact analytical expressions for the dispersion relation of one-dimensional chiral photonic crystals. [K. Kim, K. Yoo, D.-H. Lee, and H. Lim, Wave Random Complex 16, June 2006, pp. 75 ～ 80]

  154. Optical and structural properties of metal-dielectric photonic bandgap structures. [J. Y. Seo, S. Cho, H. Lim, and S. Lee, Current Appl. Phys. 6(1), Aug. 2006, pp. 62～ 66]

  155. Electrosynthesis and characterization of GaAs in acid solutions by potentiostatic method. [T. Mahalingam, S. Lee, H. Lim, H. Moon and Y. D. Kim, Solar Erer. Mater. & Solar Cells 90, Sept. 2006, pp. 2456 ～ 2463]

  156. Fabrication of the uniform CdTe quantum dot array on GaAs subrstrate utilizing nanoporous alumina masks. [M. Jung, H.S. Lee, H.L. Park, H. Lim, and S. Mho, Current Appl. Phys. 6(6), Oct. 2006, pp. 1016 ～ 1019]

  157. Propagation of p-polarized electromagnetic waves obliquely incident on stratified random media: Random phase approximation. [K. Kim, F. Rotermund, D.-H. Lee, and H. Lim, Wave Random Complex (Taylor & Francis) 17(1), Feb. 2007, pp. 43 ～ 53]
  158. In-plane multi-channel dorp filter built in a homogeneous 2D photonic crystal.[Y.G. Roh, S. Yoon, H. Jeon, S. Kim, and H. Lim, J. Kor. Phys. Soc. 50(2), Feb. 2007, pp. 444 ～ 447]
  159. Off-resonant third-order optical nonlinearities of Au:SiO₂ nanocomposite films.[H.W. Lee, S. Cho, S. Lee, F. Rotermund, J. Lee, and H. Lim, J. Kor. Phys. Soc. 51(1), Jul. 2007, pp. 390 ～ 396]
  160. Multi-kHz optical parametric chirped pulse amplification in periodically poled stoichiometric LiTaO₃at 1235 nm. [W.B. Cho, K. Kim, H. Lim, J. Lee, S. Kurimura, and F. Rotermund, Opt. Lett. 32(19), Oct. 2007, pp. 2828 ～ 2830]
  161. Synthesis of GaAs/SiO2 nanocomposite films by using an alternating sputtering method. [S. Cho, S. Lee, and H. Lim, J. Kor. Phys. Soc. 51(5), Nov. 2007, pp. 1758 ～ 1762]
  162. Disorder-enhanced transmission of a quantum mechanical particle through a disorderedtunneling barrier in one dimension: Exact calculation based on the invariant imbedding method. [K. Kim, F. Rotermund, and H. Lim, Phys. Rev. B 77(2), Jan. 2008, pp. 024203-1 ～ 203-6]
  163. Propagation of electromagnetic waves in stratified media with nonlinearity in both dielectric and magnetic responses. [K. Kim, D.K. Phung, F. Rotermund, and H. Lim, Opt. Express 16(2), Jan. 2008, pp. 1150 ～ 1164]
  164. Superior characteristics of organic chalcone single crystal as efficient nonlinear optical material. [A.J. Kiran, H.C. Kim, F. Rotermund, H.J. Ravindra, S.M. Dharmaprakash, and H. Lim, Appl. Phys. Lett. 92(11), Mar. 2008, pp.113307-1 ～ 307-3]
  165. Exact calculation of the Optical Properties of One-Dimensional Nonlinear Photonic Crystals. [D.K. Phung, F. Rotermund, K. Kim, and H. Lim, J. Kor. Phys. Soc. 52(5), May. 2008, pp. 1580 ～ 1584]
  166. Invariant Imbedding Theory of Wave Propagation in Stratified Complex Media. [K. Kim and H. Lim, J. Kor. Phys. Soc. 52(5), May. 2008, pp. 1598 ～ 1604]
  167. Particle size-dependent giant nonlinear absorption in nanostructured Ni-Ti alloys. [J.K. Anthony, H.C. Kim, H.W. Lee, S.K. Mahapatra, H.M. Lee, C.K. Kim, K. Kim, H. Lim, and F. Rotermund, Opt. Express 16(15), Jul. 2008, pp. 11193 ～ 11202]
  168. Strong influence of nonlinearity and surface plasmon excitations on the lateral shift. [K. Kim, D.K. Phung, F. Rotermund, and H. Lim, Opt. Express 16(20), Sept. 2008, pp. 15506 ～ 15513]
  169. Resonant absorption and mode conversion in a transition layer between positive -index and negative-index media. [K. Kim, D.-H. Lee, and H. Lim, Optics Express 16(22), Oct. 2008, pp. 18505 ～ 18513]
  170. Fabrication and characterization of ultrafast carbon nanotube saturable absorbers for solid-state laser mode locking near 1μm. [J.H. Yim, W.B. Cho, S. Lee, Y.H. Ahn, K. Kim, H. Lim, G. Steinmeyer, V. Petrov, U. Griebnez, and. F. Rotermund, Appl. Phys. Lett. 93(16), Oct. 2008, pp. 161106-1 ～ 106-3]
  171. Terahertz electromagnetic interference shielding using single-walled carborn nanotube flexible films. [M.A Seo, J.H. Yim, Y.H. Ahn, F. Rotermund, D.S. Kim, S. Lee, and H. Lim, Appl. Phys. Lett. 93(23), Dec. 2008, pp. 231905-1 ～ 905-3]
  172. Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes.[E.S. Choi, M.H. Doan, H.P.T. Nguyen, S. Kim, H. Lim, F. Rotermund, J.J. Lee, J. Crystal Growth 311, Mar. 2009, pp. 863 ～ 866]
  173. Bundling influence on ultrafast optical nonlinearities of SWCNTs in suspension and composite film.[H.W. Lee, J.H. Yim, A.J. Kiran, I.H. Back, S. Lee, D-I Yeom, Y.H. Ahn, K. Kim, J. Lee, H. Lim, and F. Rotermund, Appl. Phys. B 97, May 2009, pp. 157 ～ 162]
  174. Surface Plasmon Excitation in Fibonacci Metal-Dielectric Multilayers. [K. Kim, J.W. Yoo, and H. Lim, J. Comput. Theor. Nanosci. 6(9), Sept. 2009, pp. 2054 ～ 2059]
  175. Computational design of 1D nonlinear photonic crystals with material dispersion for efficient second-harmonic generation. [S. Kim, K. Kim, F. Rotermund, and H. Lim, Opt. Express 17(21), Oct. 2009, pp. 19075 ～ 19084]
  176. Enhanced ultrafast optical nonlinearity of porous anodized aluminum oxide nanostructures. [H.W. Lee, J. Kiran, H.-D. Nguyen, S.-I. Mho, K. Kim, H. Lim, J.J. Lee, and F. Roterumund, Opt. Express 17(21), Oct. 2009, pp. 19093 ～ 19101]
  177. Improved bending loss characteristics of asymmetric surface plasmonic waveguides for flexible optical wiring. [S. Lee, S. Kim, and H. Lim, Opt. Express 17(22), Oct. 2009, pp. 19435 ～ 19443]


Ⅲ. Publications in international conference proceedings
  1. Electrical Switching Phenomena in V2O5-TeO2 glass Semiconductors. [C. Rhee, S.W. Yoon, and H. Lim, Proc. 10th Int'l Conf. on Glass, July 1974, Kyoto, Japan, pp. 7-51～7-58]

  2. Dislocation associated defects in GaAs. [J.C. Bourgoin, H.J. von Bardeleben H. Lim, D. Stievenard, and A. Bonnet, Inst. Phys. Conf. Ser. No. 91 (14th Int'l Symp. GaAs & Rel. Compounds), 1988, pp. 85～88]

  3. Point defects, dislocations in GaAs and material homogeneity. [J.C. Bourgoin, H.J. von Bardeleben H. Lim, and D. Stievenard, Mat. Res. Symp. Proc. Vol. 104, 1988, pp. 411～414]

  4. Behavior of C-V Hysteresis in Al2O3/InP MIS Diode. [C.H. Kim, Byungdoo Choe, T.W. Kim, and H. Lim, Proc. 5th Int'l Symp. Phys. of Semicond. & Appl. Seoul, Aug. 1990, pp. 354～358]

  5. The Study of Zn-diffused InP by photoluminescence. [J.S. Choi, H. Lim, C.H. Chung, S.K. Chang, and H.L. Park, Proc. 5th Int'l Symp. Phys. of Semicond. & Appl. Seoul, Korea, Aug. 1990, pp. 375~382]

  6. An Experimental Study of Energy Band Structure of AgxCu1-xGaSe2 Crystals. [S. Park, S.K. Lee, J.E. Kim, H.Y. Park, H.L. Park, H. Lim, and W.T. Kim, Proc. 8th Int'l Conf. Tern. & Multin. Comp.,Kishinev, USSR,Sept. 1990, pp. 145～148]

  7. Optical Properties of AgGaSe2x crystals. [S. Park, S.K. Lee, J.E. Kim, H.Y. Park, H.L. Park, H. Lim, and W.T. Kim, Proc. 8th Int'l Conf. Tern. & Multin. Comp., Kishinev, USSR,Sept. 1990, pp. 149～151]

  8. Optical Absorption Properties of AgGaGeSe4 and AgGaGeSe4:Co2+ single crystals. [Y.S. Kim, K.S. Yu, S.H. Choe, H.Y. Park, J.E. Kim, H. Lim, H.L. Park, C.D. Kim, H.G. Kim, and W.T. Kim, Proc. 8th Int'l Conf. Tern. & Multin. Comp., Kishinev, USSR, Sept. 1990, pp. 305～308]
  9. Intrinsic Defects and Interface Problems in Ⅲ-Ⅴ Compound Semiconductors. [Byundoo Choe, and H. Lim, Proc. 1st Korea-Japan Joint Symp. Semicond., Tokyo, Japan, Oct. 1991, pp. 1～5]

  10. Interface Constraints in InP MIS Structures. [C.H. Kim, Byungdoo Choe, H. Lim, J.I. Lee, and K.N. Kang, Proc. 8th Korea-Chin. Symp. Solid-St. Phys., Taipei, Taiwan, Oct. 1992, pp. 785～796]

  11. Constant Capacitance Technique to study Electrical Instabilities in InP MIS Provided by PECVD Silicon Nitride. [C.H. Kim, S.D. Kwon, Byungdoo Choe, I.K. Han, J.I. Lee, K.N. Kang, H.L. Park, and H. Lim, Proc. 6th Int'l Symp. Thin Film, Paris, Jun. 1992, pp. 858～862]
  12. Studies on the electrical properties of (NH4)2Sx-treated In0.5Ga0.5P Schottky contact and its stability. [S.D. Kwon, Byung-Doo Choe, and H. Lim, Workbook 94 Sino-Korea Symp. Semicond. Phys. & Dev. Appl., Beijing, China, Sept. 1994, pp. 11]
  13. Characteristics of quantum-well capacitance-voltage profiles. [C.R. Moon, H. Lim, and K.S. Chung, Proc. 3rd Korea-China Workshop on New Materials, Cheju, Korea, Aug. 1999, pp. 341~348]

  14. High-Efficiency Luminescence Up-Conversion of Infrared to Red Light in Type-I and Type-II AlxGa1-xAs/InGaP Single Heterostructures. [Y. H. Cho, H. Lim, W. Jhe, Proc. Pacific Rim CLEO (Conf. on Laser and Eletro-Optics) 99 Vol. 3, Seoul, Korea, Sept. 1999, pp. 955～956]
  15. Microwave Photonic Crystals and Their Applications. [I. Park, H. Lim, J. E. Kim, and H. Park, Abstr. Int'l Workshop. Quant. Transp. Synt. Metal II, Seoul, Korea, Aug. 2000, p. 27]

  16. Spectro-ellipsometry Investigation of Cascaded Crystalization Behavior of Phase Change in Ge-Sb-Re Alloy. [S. Y. Kim, S. J. Kim, H. Lim, S. M. Na, Y. D. Park, T. H. Jeong, and H. Seo, Proc. Int'l Symp. Opt. Memory, Chitose, Japan, Sept. 2000, pp. 144～145]
  17. Substitutional Site of Co2+ Ions in AgGaS2 and AgInSe Single Cystals. [H. Kim, S.-J. Lee, J.-E. Kim, H. Y. Park, G. D. Jones, H. Lim, and H. T. Kim, 25th Commonwealth Annual Condensed Matter Meeting, Marlborough, New Zealand, Feb. 2001, p. P2-9]

  18. High-Q Multiple Pass Band Filter using One-Dimensional Hetero-Photonic Band Gap Structures. [I.-S. Chung, Y.-K. Ha, J.-E. Kim, H. Y. Park, and H. Lim, 25th Commonwealth Annual Condensed Matter Meeting, Marlborough, New Zealand, Feb. 2001, p. P2-10]

  19. Two-dimensional tunable metallic photonic crystals infilterated with liquid crystals. [C. S. Kee and H. Lim, Proc. Int'l Workshop on QTSM & QFS 2001, Seoul, Korea, May 2001, p. 78]

  20. Terahertz pulse propatation in plastic photonic crystal fibers. [H. Han, H. Park, M. Cho, J. Kim, I. Park, H. Lim, Proc. IEEE MTT-S Digest, Seatle USA, June 2002, pp. 1075-1078]

  21. Application of microstrip ring for tunable photonic bandgap structures. [M. Y. Jang, L. H. Fang, C. S. Kee, I. Park, and H. Lim, Abstracts Book PIERS 2002, Boston USA, July 2002, p. 545]

  22. Tuning of anisotropic optical properties of two-dimensional dielectric Photonic crystals. [C. S. Kee K. Kim, H. Lim, Abstract Book ETOPIM 6, Utah USA, July 2002, p. 113]

  23. The structural and optical properties of MNb2PS10(M=K, Rb, Cs)one-dimensional semiconductors. [H. Yun, K. Ryu, H. Lim, H. J. Song and W. T. Kim, Abstracts Book ISPSA 2002, Cheju Korea, Aug. 2002 p. 84]

  24. Effects of thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs MQWs by IFVD. [J. S. Yu, J. D. Song, Y. T. Lee, and H. Lim, Abstracts Book ISPSA 2002, Cheju Korea, Aug. 2002, p. 162]
  25. IFVD of the In0.2Ga0.8As/GaAs MQW structure : Effect of Deposition Pressure and Temperature in PECVD dielectric capping layer. [J. S. Yu, J. D. Song, J. M. Kim, Y. T. Lee, and H. Lim, Abstracts Book ISPSA 2002, Cheju Korea, Aug. 2002, p. 310]

  26. Current Topics in Nano-photonics (Invited). [H. Lim, ASEAN Workshop on Nanotechnology Development, Bangkok Tailand, Sept. 2002, APEC Nano Forum Web]
  27. THz emitter using linearly tapered slot antennas integrated with traveling wave photodetector. [K. Moon, H. Park, H. Han, J. Sohn, I. Park, and H. Lim, Abstract Book THz-Bridge Workshop, Capri Italy, Oct. 2002, p. Tu-P17]

  28. Coupling and Decoupling of localized Photons in two-dimensional photonic crystals.[H. Lim, C.-S. Kee, H. Y. Park, J. E. Kim, I.-S. Woo, Abstract Book PECS-Ⅳ UCLA USA, Oct. 2002, p. 58]

  29. Photonic crystal multi-channel add/drop filters. [C.-S. Kee, D. H. Cho, I. Park, S. K. Lee, H. Han, and H. Lim, 2003 MRS Spring Meeting Proc., San Francisco USA, Apr.2003, p.194]

  30. Spectro-ellipsometric Studies of Au/Si02 Nanocomposite Films. [S. Lee, K.S. Lee, T.S. Lee, H. Lim, B. K. Chung, AEPSE 2003 Proc., Seoul, Korea, Sept. 2003, p. 116]

  31. Sythesis of GaAs/Si02 Nanocomposite Films Using alternating Sputtering Method. [S. Lee, K.S. Lee, T.S. Lee, H. Lim, S. H. Cho, AEPSE 2003 Proc., Seoul, Korea, Sept. 2003, p. 117]

  32. Theory of the propagation of coupled waves in arbitrarily-inhomogeneous stratified media. [K. Kim, H. Lim, and D. H. Lee, PIERS 2003 Proc., Hawaii, USA, Oct. 2003, p.471]

  33. Tunable Resonant Tranmission of EM waves in the EM stop bands of a magnetized plasma slab. [C.-S. Kee, K. Kim, and H. Lim, PIERS 2003 Proc., Hawaii, USA, Oct. 2003, p. 485]

  34. Coupling characteristics of localized photons in 2D photonic crystals and its application tomulti-channel drop filters. [C.-S. Kee, and H. Lim, 1st Int'l Symp. Future Issues in Nano-optoelectronics Proc. Seoul, Korea, Oct. 2003, pp. 22∼31]

  35. Resonant Optical Transmission : Similarity between the EM wave propagation in transparent metals and magnetized plasma. [H. Lim, ICAMD'03 Work Book, Cheju, Korea, Dec. 2003, p. 50]

  36. Characteristics of resonant modes of photonic crystal cavities. [H.-Y. Park, D.-H. Cho, C.-S. Kee, K. Kim, and H. Lim Photonics West (Optoelectronics 2004), San Jose, USA, Jan. 2004, SPIE Proc. Series Vol. 5360, pp. 400∼404]

  37. A compact and high-performance microstrip low-pass filter using shunt open stubs and a coupled slot on the ground plane. [K. Kim, S. Kim, I. Park, H. Lim, and H. Han, PIERS 2004. Proc., Pisa, Itly, Mar. 2004, p. 49]

  38. Optimally Designed Transparent Metals: One-dimensional Metallo-Dielectric Photonic Crystal Structures. [C. -S. Kee, and H. Lim, Proc. 2nd STAR Workshop on Control of Light-Matter Interaction in Semiconductor Nanostructures, Grenoble, France, Sept. 2004. P.16]
  39. Highly efficient multi-channel Add/Drop filters based on photonic crystals. [ S. Kim, I. Park, H. Lim, and C. -S. Kee, Proc. 2nd STAR Workshop on Control of Light-Matter Interaction in Semiconductor Nanostructures, Grenoble, France, Sept. 2004, P.16]
  40. Design of Photonic Crystal Splitters/Combiners. [S. Kim, I. Park, and H. Lim, SPIE Proc. Vol. 5597, Philadelphia, USA, Oct. 2004, pp. 129~135]

  41. Some Characteristics of Photonic Crystal Waveguides and Multi-Channel Drop Filters. [H. Lim, S. Kim, C. -S. Kee, and H. Jeon, Proc. 5th Int'l Workshop on Semicond. Quant. Structures, Seoul, Korea, Oct. 2004, pp.147~159]

  42. Coupling characteristics of localized modes in 2D photonic crystals and its Applications to Multi-Channel Drop Filters. [C. -S. Kee, S. Kim, and H. Lim, UK-Korea Nano Forum Workbook, London, England, Nov. 2004, P. 13]

  43. Optimally designed Nanotechnology Education Program for Multi-Connectable Experts. [H. Lim, 5th Korea-Japan Sci & Technol. forum, Seoul, Korea, Apr. 2005. pp. ~ ]

  44. Experimental demonstration of photonic crystal 4-channel drop filter. [Y. -G. Roh, S. Yoon, H. Jeon, S. Kim, and H. Lim, Abstract Book PECS-VI. Jun. 2005 Crete Greece, p. 97]
  45. Photonic crystal base higher-order bandpass filter design for WDM communication systems. [D. Park, S. Kim, I. Park, and H. Lim, Abstract Book PECS-VI, Jun. 2005, Crete Greece p.105]
  46. Modulation instability in dispersion and gain managed fibers.〔B. H. Choi, S.-I. Kim, I. Park, and H. Lim, Jul. 2005, SPIE Proc. Vol. 5867(1) pp. 18-1 ～ 8〕
  47. THz Pulse Imaging of Articular Cartilage. [E. Jeong, H. Park, J. Kim, H. Han, J. Cui, S. Kim, I. Park, B. Min, and H. Lim, Workbook, Int'l School of Sol.-St. Phys. 35th W/S: Phys. & Technol. THz Photonics, Jul. 2005, Erice Italy, p. 34]
  48. Effects of structural imperfection in the transmission of one-dimensional transparent metals. [H. Lim, S. Cho, and S. Lee, Abstract Book of 2005 U.S. - Korea Conf. on Sci. & Technol.(UKC 2005), Aug. 2005, Irvine USA, pp. 343 ∼ 344]
  49. Optical and structural properties of metal - dielectric photonic bandgap structure.〔J. Y. Seo, S. Cho, H. Lim, and S. Lee, Proc. 3rd Int'l Nanotech Symp. Nono Korea 2005, Aug. 2005, Seoul. Korea, pp. 399 ～ 402〕
  50. Nanophotonics Activities in Korea. [H. Lim, Workbook of 2nd Germany - Korea Sci. & Technol. Forum, Sept. 2005, Berlin Germany, p. 13]
  51. Current Topics in Nanophotonics: from Physics to Devices. [S. Kim, J. Lee, and H. Lim, Abstract Book, 2005 Int'l Conf. Nanoscience and Nanotechnology, Nov. 2005, Gwanju Korea, P. O4-2]
  52. Strong enhancement of the electric field in 1D photonic crystals with a nonlinear defect. 〔K. Kim, D.K. Phung, H. Lim and D.-H. Lee, Proc. ICAMD, Jeju Korea, Dec. 2005, p. 112〕
  53. Photonic crystal-based passive devices for photonic integrated circuits. 〔 S.-I. Kim, I. Park, and H. Lim, 3rd Korea-US Nano Forum, Seoul Korea, Apr. 2006, pp. 1～7〕
  54. 1-kHz Cr:forsterite optical parametric chirped pulse amplifier with periodically poled stoichiometric LiTaO₃〔 F. Rotermund, K. Kitamura, H. Lim, S. Kurimura, C. J. Yoon, and W. B. Cho, Proc. CLEO/QELS, Long Beach USA, May 2006, pp. JThC43-1 ～ 3 〕
  55. Modification of undergraduate courses for the early introduction of Nanotechnology.〔S.-I. Kim, J. Lee, H. Lim, and K.H. Park, Proc. ICEE 2006, San Juan Pueto Rico, Jul. 2006, pp. M4E 15 ～ 19〕
  56. Exact calculation of the nonlinear optical response of 1D photonic bandgap structures.〔P. D. Khuong, K. Kim, F. Rotermund, and H. Lim, Proc. PIERS 2006, Tokyo Japan, Aug. 2006, p. 284〕
  57. Teraherz pulse imaging of Human Articular Cartilage.〔E. Jung, H. Park, J. Kim, Y. Han, H. Han, S. Kim, I. Park, J. Cui, B. Min, and H. Lim, Proc. IRMMW-THz 2006 (2006 IEEE 4244), Sanghai China, Sept. 2006, p. 550〕
  58. Nanotechnology in Korea : NT Roadmap and Nanophotonics. 〔H. Lim, Proc. 1st Int'l W/S on Nanophotonics, Gwangju Korea, Nov. 2006, pp. 3 ～ 12〕
  59. Low-loss optical wave guides based on surface plasmon polaritons. 〔S.-I. Kim, I. Park, S. H. Song, H. Lim, N.Q. Minh, and S. J. Lee, Proc. 3rd Int'l W/S Nanophysics & Nanomaterials(IWNN), Halong Vietnam, Dec. 2006, p. 628〕
  60. Invariant embedding theory of wave propagation in stratified complex media.〔K. Kim and H. Lim, Proc. 3rd IWNN, Halong vietnam, Dec. 2006, p. 538 ～ 542〕
  61. Compact three-layered electromagnetic bandgap structures using square patch and square ring stripline. 〔I. Park, S.-I. Kim, H. Lim, H. Han, N, Kang, and I. S. Woo, Proc. 3rd IWNN, Halong Vietnam, Dec. 2006, p. 627〕
  62. Korea Nanotechnology : Governmental Policy, Roadmap, Infrastrusture and Research Activities. 〔H. Lim, Proc. 3rd IWNN, Halong Vietnam, Dec. 2006, p. 577〕
  63. Exact calculation of the optical properties of a slab of negative index media with nonlinearity in both dielectric and magnetic responses. 〔D. K. Phung, K. Kim, and H. Lim, Proc. 10th Asia Pacific Phys. Conf., Pohang Korea, Aug. 2007, p. 198〕
  64. Influence of the optical nonlinearity on surface plasmon excitations in thin metal films. 〔P. D. Khuong, K. Kim, and H. Lim, Proc. CLEO Pacific Rim, Seoul Korea, Aug. 2007, pp. 1108 ～ 1109〕
  65. Numerical simulation of apertureless terahertz near-field microscopes. 〔K. Lee, J. Kim, H, Park, H. Han, I. Park, and H. Lim, Proc. CLEO Pacific Rim, Seoul Korea, Aug. 2007, pp. 1459 ～ 1460〕
  66. Design of negative index metamaterials in optical communication range. 〔S. Oh, S.-J. Lee, S. Kim, I. Park, H. Lim, and H. Han, Proc. IRMMW-Thz 2007, Cardiff England, Sept. 2007, pp. 344 ～ 345〕
  67. Self-consistent analytic scattering theory for apertureless Thz near-field microscope.〔J. Kim, H. Park, K. Lee, H, Han, I. Park, and H. Lim, Proc. IRMMW-Thz 2007, Cardiff England, Sept. 2007, pp. 496 ～ 497〕
  68. Flat lens based on self-collimation in a two-dimensional photonic crystal of square symmetry. 〔Q.M. Ngo, S. Kim, and H. Lim, Proc. Int'l W/S on Natotechnology & Appl.(IWNA) 2007, Vung Tau Vietnam, pp. 73 ～ 76〕
  69. Strong influence of nonlinearity and surface plasmon excitations on the Goos-Hanchen shift. 〔D.K. Phung, H. Lim, and K. Kim, Proc. IWNA 2007, Vung Tau Vietnam, Nov. 2007, pp. 77 ～ 80〕
  70. Macroscopic optical nonlinearities and ultrafast nonlinear responses of vertically aligned ZnO nanorods. 〔K.M. Lee, H.W. Lee, H.J. Kim, K.H. Koh, K. Kim, H. Lim, and F. Rotermund, Proc. IWNA 2007, Vung Tau Vietnam, Nov. 2007, pp. 192 ～ 194〕
  71. Research Ethics and Nanoscale Science and Technology in Korea. 〔H. Lim, and J. LEE, Proc. 34th Hallim Int'l Symp., Seoul Korea, Nov. 2007, pp.23 ～ 31〕
  72. Growth and nonlinear optical characteristics of an organic biaxial chalcone single crystal. 〔J. Kiran, H.C. Kim, H.J. Ravindra, H. Lim, K. Kim, and F. Rotermund, Proc. ICAMD 2007, Jeju, Korea, Dec. 2007, pp. 341〕
  73. Nanophotonics in Korea: Present Status and the Future. [F. Rotermund, K. Kim, S. Kim, J. Lee, and H. Lim, Proc. Int'l W/S on Photonics & Applications. 2008, Nha Trang, Vietnam, Sept. 2008, pp. 44 ～ 45]
  74. Overview on Nanotechnology in Korea : Policy and Current Status.〔Hanjo Lim, and D.-S. So, Abstract Book 6th US-Korea Nano-Forum, Las Vegas, USA, Apr. 2009, p. 7〕
  75. Korean Experiences in International Scientific Cooperation in Nanotechnology.〔Hanjo Lim, Workbook OECD WPL Policy Round Table on Nanotechnology, Braga, Portugal, Jun. 2009, p.5〕
  76. THz Spectroscopic Estimation of Water Content in Human Articular Cartilage.〔E. Jung, H. Park, H. Han, S. Kim, I. Park, H. Lim, and B. Min, Proc. IRMMW-THz 2009, Busan, Korea, Sept. 2009, pp. R003193 ～ 3194〕
  77. Efficient Shielding of Terahertz Waves using CNT Films fabricatied by Filteration Method.〔J.Y. Moon, D.J. Park, J.H. Yim, F. Rotermund, S. Lee, Y.H. Ahn, and H. Lim, Proc. IRMMW-THz 2009, Busan, Korea, Sept. 2009, pp. R 3A020360 ～ 361〕
  78. Hetero-Metal Stripe as curved Long-Lange SPP Waveguide. 〔S.J. Lee, S. Kim, and H. Lim, Proc. IRMMW-THz 2009, Busan, Korea, Sept. 2009, pp. W5E100462〕
  79. Korean Experience in Nanotechnology Industrialization and Possibility of International Cooperations.〔F. Rotermund, K. Kim, S. Kim, J. Lee, and H. Lim, Abstract Book Int'l Conf. on NT; ICONT-2009, Langkawi, Malaysia, Dec. 2009, p.1〕
  80. Nanophotonics of Complex Media.〔K. Kim, F. Rotermund, and H. Lim, Abstract Book Int'l Conf. on NT, ICONT-2009, Langkawi, Malaysia, Dec. 2009, p. 2〕


Ⅳ. Publications in Domestic journals
  1. 광도파관에서 자성박막에 의한 모드변환. [정 상구, 임 한조, 전자공학회지 20(6), Nov. 1983, pp. 52～57]

    2. Mode Conversion in Magneto-Optic Thin-Film Waveguide. [Sang-Koo Chung, and Han-Jo Lim, JKIEE 20(6), Nov. 1983, pp. 52～57]
  2. 결정성장 과정과 불순물이 InP의 deep level 분포에 미치는 영향. [임 한조, 정상구, 김현남, 새물리(한국물 리학회지) 23(4), Dec. 1983, pp. 343～349]

    3. Influence of the Growing Conditions and Impurities on the Deep Levels of InP. [H. Lim, S.K. Chung, and H.N. Kim, New Phys. (Korean Physical Society) 23(4), Dec. 1983, pp. 343～349]
  3. 습도가 InP 터널 MIS 소자의 전기적 특성에 미치는 영향. [임 한조, 정상구, 김현남, 전자공학회지 21(4), Jul. 1984, pp. 52～57]

    4. Humidity effects on the Electrical Properties of InP Tunnel MIS diodes. [Han-Jo Lim, Sang-Koo Chung, and Hyun-Nam Kim,JKIEE 21(4), Jul. 1984, pp. 52～57]
  4. 양자가 조사된 InP의 깊은 준위에 관한 연구. [임 한조, 정상구, 김현남, 강 일원, 새물리 24(4), Dec. 1984, pp. 337～340]

    5. Defects Induced by Proton Irradiation in n-InP. [H. Lim, S.K. Chung, H.N. Kim, and I. Kang, New Phys. 24(4), Dec. 1984, pp. 337～340]
  5. Gold furnace를 이용한 LPE 성장장치. [신 기철, 김 홍국, 김 철구, 정 중현, 문 동찬, 임 한조, 새물리 25(4), Dec. 1985, pp. 332～336]

    6. LPE Growth System using a Gold Furnace. [K.C. Shin, C.K. Kim, C.H. Chung, D.C. Moon, and H. Lim, New Phys. 25(4), Dec. 1985, pp. 332～336]
  6. Deep Level Study of Horizontal Bridgman Grown GaAs by DLTS Method. [H. Lim, G.H. Chae, Z.G.Kim, and Suk-ki Min, J. Korean Phys. Soc. 18(4), Dec. 1985, pp. 298～305]

  7. DLTS 시스템에서의 신호처리에 관한 연구. [임 한조, 이 우용, 최 연익, 정 상구, 김 현남, 전자공학회지 23(11), Jan. 1986, pp. 120～125]

    8. A Study on the Data Analysis Systems in Deep Level Transient Spectroscopy. [H. Lim, W.Y Lee, Y.I. Choi, S.K. Chung, and H.N. Kim, JKIEE 23(1), Jan. 1986, pp. 120～125]
  8. Electron Irradiation Induced Defects in GaAs I-Simple Intrinsic Defects. [Han-Jo Lim, Kwang-Nham Kang, and Hae Yong Park, J. Korean Phys. Soc. 23(1), Feb. 1990, pp. 38～44]

  9. Electron Irradiation Induced Defects in GaAs II-Complex Defects. [Han-Jo Lim, Hong-Sup Kim, Byung-Doo Choe, Kwang-Nham Kang, and Hae Yong Park, J. Korean Phys. Soc. 23(1), Feb. 1990, pp. 45～49]
  10. InP에서의 Zn 확산 및 PL에 관한 연구. [최 진수, 황 종승, 장 수경, 박홍이, 정 중현, 임 한조, 새물리 30(4), Aug. 1990, pp. 404～408]
    Zn Diffusion in InP and Photoluminesence Measurements. [Jin-Soo Choi, Jong-Seung Hwang, Soo-Kyung Chang, Hong-Lee Park, Choong-Hyun Chung, and Han-Jo Lim, New Phys. 30(4), Aug. 1990, pp. 404～408]
  11. 다결정 CdS 후막의 미세구조 및 전기적 특성. [김 충환, 최 병두, 박 해용, 안 정환, 안 재환, 신 희균, 임 한조, 응용 물리 4(1), Feb. 1991, pp. 51～61]
    Microstructure and Electrical Properties of CdS Thick Film. [C.H. Kim, Byungdoo Choe, H.Y. Park, J.H. Ahn, H.K. Sin, and H. Lim, Korean Appl. Phys. 4(1), Feb. 1991, pp. 51～62]
  12. 원격 플라즈마 산화방법에 의해 제작된 InP MIS 다이오드의 C-V 특성 및 계면상태에 관한 연구. [이 정일, 이 명복, 강 광남, 임 한조, J.A. Baglio, N. DeCola, 박 홍이, 새 물리 31(3), Jun. 1991, pp. 296～301]
    A Study on the Interface States and Capacitance-Voltage Behavior of InP MIS Diode fabricated by Plasma Assisted Oxidation. [J.I. Lee, M.B. Lee, K.N. Kang, H.J. Lim, J.A. Baglio, N. DeCola, and H.L. Park, New Phys. 31(3), Jun. 1991, pp. 296～301]
  13. 갈륨비소 MESFET의 소오스와 드레인 직렬저항의 게이트 전압 의존성에 대한 모델링 및 Gate Probe Method를 응용한 파라미터 추출. [양 진모, 임 한조, 이 정일, 이 유종, 강 광남, 대한 전자공학회지 28-A (7), Jul. 1991, pp. 526～533]
    A Modeling on Gate Voltage Dependence of Series Resistances for GaAs MESFET's and the Parameter Extraction Utilizing the Gate Probe Method. [Jin Mo Liang, Han Jo Lim, Jung Il Lee, Yoo Jong Lee, and Kwang Nham Kang, J. KITE 28-A (7), Jul. 1991, pp. 526～533]
  14. Behavior of C-V Hysteresis in MOCVD-grown Al2O3/p-InP MIS diode. [C.H. Kim, Byungdoo Choe, T.W. Kim, H. Lim, J.I. Lee, and K.N. Kang, J. Korean Phys. Soc. 24(6), Dec. 1991. pp. 478～482]

  15. 산화루테늄계 후막 저항기의 과도한 전류 잡음에 관한 고찰. [김 지호, 김 진용, 임 한조, 신 철재, 박 홍이, 전자공학회 논문지 29-A(3), Mar. 1992, pp. 244～251]

    16. A Study on the Excessive Current Noise in RuO2 Thick Film Resistors. [Ji Ho Kim, Jin Yong Kim, Han-Jo Lim, Chul Chai Shin, and Hong Lee Park, J. KITE 29-A(3), Mar. 1992, pp. 244～251]
  16. LPE 방법으로 성장시킨 InGaP/GaAs 이질 접합의 전도띠 부정합 측정. [권 상덕, 김 충한, 이 종붕, 최 병 두, 임 한조, 새물리 32(3), Jun. 1992, pp. 354～360]

    17. Conduction Band Discontinuity for LPE-Grown InGaP/GaAs System. [Sang Deok Kwon, C.H. Kim, J.B. Lee, Byungdoo Choe, and H. Lim, New Phys. 32(3), Jun. 1992, pp. 354～360]
  17. n-AlGaAs/AlGaAs/p-AlGaAs 이중 이종접합 LED의 계면특성. [최 상경, 고 석중, 최 병두, 이 종붕, 임 한조, 새물리 33(3), Jun. 1993, pp. 388～394]

    18. The Characteristics of n-AlGaAs/AlGaAs/p-AlGaAs Double Heterojunction LED Interface. [S.K. Choi, S.J. Ko, Byung-Doo Choe, J.B. Lee, and Han-Jo Lim, New Phys. 33(3), Jun. 1993, pp. 388～394]
  18. 간단한 R-L-Diode 직렬회로에서의 전도잡음 발생 특성. [신 종철, 권 숙일, 김 영태, 김 영준, 변 재규, 허 준, 임 한조, 응용 물리 6(4), Jul. 1993, pp. 359～364]
    Conducted Noise Generation in a simple R-L-Diode Series Circuit. [J.C. Shin, S.-I. Kwun, Y. Kim, Y.J. Kim, J.K. Pyun, J. Her, and H. Lim, Korean Appl. Phys. 6(4), Jul. 1993, pp. 359～364]

  19. InGaAs/GaAs 양자우물 표면발광레이져 설계에 관한 연구. [박 승환, 정 원국, 김 인, 최 병두, 임 한조, 새 물리 33(6), Dec. 1993, pp. 662～667]

    20. Studies on Design for InGaAs/GaAs Quantum-Well Surface-Emitting Lasers. [S. Park, W. Jeong, Kim, B.D. Choe, and H. Lim, New Phys. 33(6), Dec. 1993, pp. 662～667]
  20. 열처리에 의하여 p-형으로 반전된 반절연성 GaAs의 전기적 특성. [고 석중, 최 병두, 박 승환, 임 한조, 새 물리 34(4), Aug. 1994, pp. 440～444]

    21. Electrical characteristics of p-type converted semi-insulating GaAs by heat treatments. [S. Gho, B.D. Choe, S. Park, and H. Lim, New Phys. 34(4), Aug. 1994, pp. 440～444]
  21. 황처리가 금속/InP Schottky 접촉과 Si3N4/InP 계면들에 미치는 영향. [허 준, 임 한조, 김 충환, 한 일기, 이 정일, 강 광남, 전자공학회 논문지 31-A(12), Dec. 1994, pp. 1672～1679]

    22. Effects of sulfur treatments on metal/InP Schottky contact and Si3N4/InP interfaces. [J. Her, H. Lim, C.H. Kim, I.K. Han, J.I. Lee, and K.N. Kang, JKITE, 31-A(12), Dec. 1994, pp. 1672～1679]
  22. Characteristics of copper impurity in In0.5Ga0.5P. [B.S. Jeong, H.L. Park, H. Lim, and D.H. Back,Korean Appl. Phys. 9(3), May 1996, pp. 309～314]
  23. 연소배가스 모니터링을 위한 SnO2계 CO센서의 검지특성. [김일진, 한상도, 임한조, 손영목, 한국센서학회 지 6(5), Sept. 1997, pp. 369～375]

    24. Sensing characteristics of SnO2 type CO sensors for combustion exhaust gases monitoring. [I.J. Kim, S.D. Han, H. Lim, Y.M. Son, J. Korean Sensors Soc. 6(5), Sept. 1997, pp. 369～375]
  24. N-형 WO3계 반도체 가스센서의 전기적 특성. [양종인, 김일진, 임한조, 한상도, 정관수, 한국센서학회지 7(3), May 1998, pp. 188～196]

    25. Electrical properties of n-type WO3 based gas sensors. [J.I. Yang, I.J. Kim, H. Lim, S.D. Han, K. S. Chung, J. Korean Sensors Soc. 7(3), May 1998, pp. 188～196]
  25. TFT-LCD용 Al합금 저저항 박막재료의 특성에 관한 연구. [윤기용, 임한조, 김동식, 정관수, 새물리 40(4), Apr. 2000, pp. 353～358]

    26. TFT-LCD Interconnection Characteristics of Low-Resistivity Al Alloy Thin Films. [K. Y. Yoon, H. Lim, D. S. Kim, and K. S. Chung, New Phys.40(4), Apr. 2000, pp. 353～358]
  26. 변형된 저지특성을 갖도록 λg/4 변환기를 정합시킨 마이크로스트립라인 포토닉 밴드갭 구조의 설계 및 응 용 [김태일, 박익모, 장미영, 임한조, 대한전자공학회지 논문지 37(TC9), Sept. 2000, pp. 534～544]

    27. Design and Application of microstrip line photonic bandgap structure with a quarter-wavelength transformer for the modified characteristics of stopband [T. I. Kim, I. Park, M. Y. Jang, and H. Lim, JKITE 37(TC9), Sept. 2000, pp.534～544]
  27. Photonic Bandgap 구조를 이용한 마이크로스트립 라인 대역통과 여파기 설계. [김태일, 김명기, 박익모, 임한조, 전자파학회 논문지 12(4), June 2001, pp. 611～621]

    28. Design of Microstrip Line Band Pass Filters using Photonic Bandgap Structures. [T. I. Kim, M. K. Kim, I. Park, H. Lim, J. KEES 12(4), June 2001, pp. 611～621]
  28. Alginate 삼차원 배양이 개 관절 연골세포 생존율, 증식 및 표현형에 미치는 영향. [박형근, 우정임, 박소라, 임한조, 민병현, 대한정형외과연구학회지 4(1), Apr. 2001, pp.24～31]

    29. Effects of Alginate Culture on Viablity, Proliferation, and Prototype of Canine Articular Chondrocytes. [H.-G. Park, J.-I Woo, S.R. Park, H. Lim, and B.-H. Min, J. Kor. Orthopaedic Res. Soc. 4(1), Apr. 2001, pp. 24～31]
  29. In vitro 전처리시 TGF-β3 첨가가 토끼 중간엽 줄기세포의 vivo 분화에 미치는 영향. [박형근, 박소라, 임한조, 민병현, 대한정형외과연구학회지 4(2), Oct. 2001, pp.167～179]
    Effects of TGF-β3 pretreatment in vitro in the differentiation of rabbit mesenchymal stem sells in vivo. [H.-G. Park, S.R. Park, H. Lim, B.-H. Min, J. Kor. Orthopaedic Res. Soc. 4(2), Oct. 2001, pp.167-176]

  30. 스텁을 갖는 PBG 셀로 구현한 마이크로스트립 PBG 구조 및 듀플렉서. [장미영, 기철식, 박익모, 임한조, 김태일, 이정일, 전자공학회 논문지 38(TC 12), Dec. 2001, pp. 503-512]
    Design of Microstrip PBG Structure and Duplexer Using PBG cell with Stub [M.-Y. Jang, C.-S. Kee, I. Park, H. Lim, T.-I. Kim and J. I. Lee, J. KITE 38(TC 12), Dec. 2001, pp. 503-512]

  31. 포토닉 밴드갭 구조를 이용한 두껍고 유전상수가 높은 패치 안테나의 성능향상. [기철식, 박익모, 한해욱, 이정일, 임한조, 전파학회 논문지 13(1), Jan. 2002, pp. 1-6]

    32. Improvement of Performance of Thick and High Dielectric Patch Antennas using Photonic Bandgap Structures. [C.-S. Kee, I. Park, H. Han, J.I. Lee, and H. Lim, J. KEES 13(1), Jan. 2002, pp. 1-6]
  32. 광결정 도파로와 초 프리즘. [기철식, 임한조, 광학과 기술 6(3), July 2002,pp. 12-16]

    33. Photonic crystal waveguide and superprism. [C.-S. Kee and H. Lim, Optical Sci. & Technology 6(3), July 2002, pp. 12-16]
  33. 소형화한 주파수 가변 마이크로파 밴드갭 구조로 응용된 마이크로스트립 링. [장미영, 기철식, 박익모, 임한조, 한해욱, 이정일, 전자공학회 논문지 39(TC9), Sept. 2002, pp. 405-412]

    34. Microstrip Ring as a Compact Tunable Microwave Bandgap Structure. [M.-Y. Jang, C.-S. Kee, I. Park, H. Lim, H.-W. Han, J.I. Lee, J. KITE 39(TC9), Sept. 2002, pp. 405-412]
  34. 넓은 저지대역을 가지는 압축된 PBG 링 구조. [김성일, 기철식, 박익모, 임한조, 전자파학회 논문지 13(10), Dec. 2002, pp. 1071-1077]

    35. Pressed PBG Ring Structure with a Wide Stopband. [Sung-Il Kim, C.-S. Kee, I. Park, and H. Lim, J. KEES 13(10), Dec. 2002, pp. 1071-1077]
  35. 개방스텝을 갖는 계단 임피던스 저역통과 필터의 해석. [김성일, 기철식, 박익모, 임한조, 전자파학회 논문 지 13(10), Dec. 2002, pp.1078-1082]

    36. Analysis of Stepped Impedance Lowpass Filter with Coupled Open Stubs.[Sung-Il Kim, C.-S. Kee, I. Park, and H. Lim, J. KEES 13(10), Dec. 2002, pp. 1078-1082]
  36. Effects of the Thickness of Dielectric Capping Layer and the Distance of QWs from the Sample Surface on the Intermixing of In0.2Ga0.8As/GaAs MQW Structures by IFVD. [J. S. Yu, J. D. Song, Y. T. Lee, and H. Lim, J. Korean Phys. Soc. 42(1), Feb. 2003, pp.s458∼s461]

  37. 초광대역의 저지대역을 갖는 3단 저역통과 필터. [김 경훈, 정 정호, 기 철식, 임 한조, 박 익모, 전자공학회 논문지 40(TC 3), Mar. 2003, pp.103∼109]

    38. A Compact Three Storage Low-Pass Filter with an Ultra-wide Stopband. [K.-H. Kim, J.-M. Jang, C.-S. Kee, H. Lim, and I. Park, J. KITE 40(TC 3), Mar. 2003, pp.103∼109]
  38. 나노 포토닉스 : 과거, 현재, 미래. [이 정일, 조 운조, 임 한조, 대한전자공학회지 30(5), May 2003, pp.472∼479]
    Nano Photonics : Past, Present and Future.[J. I. Lee, W. J. Cho, and H. Lim, J. KITE 30(5), May 2003, pp.472∼478]

  39. 광자결정 수동소자. [기 철식, 임 한조, 송 석호, 대한전자공학회지 30(5), May 2003, pp.525∼531]

    40. Photonic Crystal Passive Device. [C.-S. Kee, H. Lim, and S. H. Song, JKITE 30(5), May 2003, pp.535∼531]
  40. 나노 광결정의 연구개발 동향 및 정보분석. [이 호신, 김 경호, 이 일형, 기 철식, 임 한조, 공업화학전망 6(4), Aug. 2003, pp. 73∼84]

    41. R & D Trend and Information Analysis of Nano Photonic Crystal. [H.-S. Lee, K.-H. Kim, I.-H. Lee, C.-S. Kee, and H. Lim, Prospective of Industrial Chemistry. 6(4), Aug. 2003, pp.73∼84]
  41. 슬롯과 개방 스터브의 특성을 결합한 소형 저역통과 여파기. [김 경훈, 김 상인, 박 익모, 임 한조, 한국전자 파학회 논문지 15(1), Jan. 2004, pp.36∼43]

    42. A Compact and High Performance Lowpass Filter Using Combined Characteristics of Slot and Open Stub. [K.-H. Kim, S.-I. Kim, I. Park, and H. Lim, J. KESS 15(1), Jan. 2004, pp.36∼43]
  42. 저지대역의 중첩을 이용한 캐스캐이드 저역통과 여파기의 설계. [김 경훈, 김 상인, 박 익모, 임 한조, 한국 전자파학회논문지 15(7), July 2004, pp. 644∼652]

    43. Design of Cascaded Lowpass Filter using Combination of Stop bands. [K.-H. Kim, S.-I. Kim, I. Park, and H. Lim, J. KESS 15(7), July 2004, pp. 644∼652]
  43. 광자 결정: 이론 및 응용. [임 한조, 한국물리학회, tutorial Seesion proc. Oct. 2004, pp. 1 ∼ 41]

  44. Synthesis and Crystal Structure of a New Pentanary Thiophosphate, K0.5 Ag0.5 Nb2 PS. [Yongkwon Dong, Sangrok Kim, Hoseop Yun, and Hanjo Lim, Bull. Korean Chem. Soc. Nov. 2004. pp.309~311]

  45. 사각 링 스트립선로를 결합시킨 소형 3층 EBG 구조. [안 성남, 신 동구, 김 상인, 추 호성, 김 문일, 박 익모, 임 한조, 한국전자파학회 논문지 16(3), Mar. 2005, pp. 300~310]

    46. A Compact 3-layer EBG structure with square ring stripline. [S.-N.An, D.-G.Shin, S. Kim, H.-S.Choo, M.-I.Kim, I.Park, and H.Lim, J. KESS 16(3), Mar. 2005, pp. 300 ∼ 310]
  46. WDM 시스템에 적합한 광결정 대역통과필터 설계. 〔박 동수, 김 상인, 박 익모, 임 한조, 한국광학회지 16(3), Jun. 2005, pp. 266 ～ 274〕

    47. Photonic Crystal Based Bandpass Filter Design for WDM Communication Systems.〔D. S. Park, S.- I. Kim, I. Park, and H. Lim, J. Kor. Opt. Soc. 16(3), Jan. 2005, pp. 266 ～ 274〕
  47. 연구윤리와 한국의 나노과학기술. [이 정일, 임 한조, 물리학과 첨단기술 17(1), Jan. 2008, pp. 58 ～ 61]

  48. 고출력 테라헤르츠파 발생을 위한 새로운 구조의 Yagi-Uda 안테나. [한 경호, 박 용배, 김 상인, 박 익모, 임 한조, 한국광학회지 19(1), Feb. 2008, pp. 9 ～ 14]

    49. A New Type of Yagi-Uda Antenna for High Terahertz Output Power.[K. Han, Y. Park, S. Kim, I. Park, H. Lim, and H. Han, J. Opt. Soc. Korea 19(1), Feb. 2008, pp. 9 ～ 14]
  49. 우리나라의 광산업 및 광기술의 미래와 기초연구.〔임 한조, 광학과 기술 13(3), Jul. 2009, pp. 2 ～ 6〕

  50. 높은 출력의 THz 포토믹서를 위한 네잎클로버 형태의 안테나.〔우 인상, 박 익모, 임 한조, 한 해욱, 주 홍, 한국광학회지 20(5), Oct. 2009, pp. 294 ～ 300〕


Ⅴ. 저 서
  1. 일반 물리학 실험 [편저] [김 현남, 노 평식, 원 영희, 임 한조, 형설 출판사, 1976]

  2. 공업 계열 물리학 [편저] [노 평식, 원 영희, 임 한조, 임 우영, 형설출판사, 1977]

  3. 고체 물리학 [번역서] [김 형국, 박 만장, 박 영걸, 박 홍이, 임 한조, 조 육, 청문각, 1991]

    4. * 원본: M. A. Omar, Elementary Solid State Physics. [Addison-Wesley, 1975]
  4. 고체 물리학 [번역서 [박 홍이, 김 태환, 박 해용, 이 경수, 이 용탁, 임 한조, 사이텍 미디어, 2000]

    5. * 원본: H. Ibach and H. Luth, Solid-State Physics, 2nd Ed.[Springer, 1996]
  5. 나노 광결정 소자기술 [기 철식, 임 한조, 한국과학기술정보 연구원, 2002. 12]

  6. 양자역학적 점/선 기술 [이 정일, 임 한조, 한국과학기술정보연구원, 2003.12]
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