M I C R O   S E N S O R   &   A C T U A T O R

 

 Piezoresistive Accelerometers

Micro Systems Lab. in AJOU UNIVERSITY

Fig. 1. The front side of accelerometer.

Fig. 2. The back side of accelerometer.

A Study on a Silicon Resonator for Piezoresistive Accelerometers
E. H. Yang, S. S. Yang, and O. C. Jeong

ABSTRACT
In this paper, a silicon resonator which is an important structure of piezoresistive accelerometer for air bag systems has been designed, and fabricated using the silicon-micro machining techniques.  The resonator consists of a seismic mass and four deflection beams.  The seismic mass of mesa structure and beams are fabricated by the anisotropic etching process using EPW.  On the surface of both ends of the beams, piezoresistors are fabricated by diffusion process.  The deflection of the beam under acceleration causes the change in the resistance of the piezoresistors.  The 8 piezoresistors are properly arranged and connected to make a bridge circuit so that acceleration in only one direction may be measured.  The designed first resonant frequency of this resonator is 16.8 KHz.  In the range of frequency below 15 KHz, the frequency response has been obtained from experiments, and the sensitivity of the output to acceleration in the range of low frequency is 4.3 uV/Vg at 22 degree.   (The Transactions of KIEE, vol. 41, 10, 1992)

 

Fig. 3. The structure of the resonator.

Fig. 4. Another Accelerometer.

 KOREAN ABSTRACT

Micro Systems Lab. in AJOU UNIVERSITY

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  Related Papers

  1. ¾çÀÇÇõ, ¾ç»ó½Ä, ¡°A Study on a Silicon Resonator for Piezoresistive Accelerometer,¡± Àü±âÇÐȸ³í¹®Áö 41±Ç 10È£, pp. 1164-1171, 1992. 10
  2. ¾çÀÇÇõ, ¾ç»ó½Ä, ÇÑ»ó¿ì, ¡°SOI ±¸Á¶¸¦ ÀÌ¿ëÇÑ ½Ç¸®ÄÜ ¾ÐÀúÇ× °¡¼Óµµ°èÀÇ ¼³°è ¹× Á¦ÀÛ,¡± ´ëÇÑÀü±âÇÐȸ Ãß°èÇмú´ëȸ ³í¹®Áý, pp. 192-194, 1993.11.
  3. ¾çÀÇÇõ, ¾ç»ó½Ä, Ȳ¼ºÈ£, ±èÈ«¼®, ¡°Fabrication of a Silicon Piezoresistive Accelerometer with Silicon-on-Insulator Structure,¡± ´ëÇѱâ°èÇÐȸ Ãá°èÇмú´ëȸ ³í¹®Áý, pp. 684-686, 1994.4.
  4. ¾çÀÇÇõ, ¾ç»ó½Ä, ¡°A Silicon Piezoresistive Accelerometer with Silicon-on-insulator structure,¡± ´ëÇÑÀü±âÇÐȸ ³í¹®Áö, 43±Ç 6È£, pp. 1036-1038, 1994. 6.
  5. Áö¿µÈÆ, ¾çÀÇÇõ, ¾ç»ó½Ä, ¡°p+ ÄÁÆ¿·¹¹ö ºöÀ» ÀÌ¿ëÇÑ ´Ù°áÁ¤ ½Ç¸®ÄÜ ¾ÐÀúÇ× °¡¼Óµµ°èÀÇ Á¦ÀÛ,¡± ´ëÇÑÀü±âÇÐȸ Ãß°èÇмú´ëȸ ³í¹®Áý, pp. 416-418, 1994.11.
  6. ¾çÀÇÇõ, Á¤¿ÁÂù, ¾ç»ó½Ä, ¡°p+ ½Ç¸®ÄÜ ¹Ú¸·À» ÀÌ¿ëÇÑ Æú¸®½Ç¸®ÄÜ ¾ÐÀúÇ× °¡¼Óµµ°èÀÇ Á¦ÀÛ ¹× ÃøÁ¤,¡± ´ëÇÑÀü±âÇÐȸ 1996³â ÇϰèÇмú´ëȸ ³í¹®Áý(C), pp. 1994-1996, 1996.7.
  7. ¾çÀÇÇõ, ¾ç»ó½Ä, ¡°p+ ½Ç¸®ÄÜ ½Ä°¢Á¤ÁöÃþÀ» ÀÌ¿ëÇÏ¿© ¸öü°¡°øÇÑ Æú¸®½Ç¸®ÄÜ ¾ÐÀúÇ× °¡¼Óµµ°è,¡± ´ëÇÑÀü±âÇÐȸ ³í¹®Áö, 45±Ç 10È£, pp. 1509-1511, 1996. 10.
  8. ±è»óö, Á¤¿ÁÂù, ¾ç»ó½Ä, "p+ ½Ç¸®ÄÜ ºê¸®Áö¸¦ °®´Â Æú¸®½Ç¸®ÄÜ ¾ÐÀúÇ× °¡¼Óµµ°èÀÇ Á¦ÀÛ ¹× ÃøÁ¤," ´ëÇÑÀü±âÇÐȸ MEMS¿¬±¸È¸ Çмú¹ßǥȸ, ´ëÇÑÀü±âÇÐȸ, pp.141-147, 1998.04.

 

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